Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Serie
TK
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15.1mm
Detalii produs
MOSFET Transistors, Toshiba
€ 3,34
€ 3,34 Buc. (fara TVA)
€ 3,97
€ 3,97 Buc. (cu TVA)
Standard
1
€ 3,34
€ 3,34 Buc. (fara TVA)
€ 3,97
€ 3,97 Buc. (cu TVA)
Standard
1
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar |
---|---|
1 - 9 | € 3,34 |
10 - 19 | € 3,15 |
20 - 49 | € 2,95 |
50 - 249 | € 2,59 |
250+ | € 2,40 |
Documente tehnice
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Serie
TK
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
15.1mm
Detalii produs