Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SC-75
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Latime
0.8mm
Lungime
1.6mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
0.7mm
Tara de origine
Japan
Detalii produs
MOSFET N-Channel, SSM3K Series, Toshiba
MOSFET Transistors, Toshiba
€ 9,00
€ 0,09 Buc. (Intr-un pachet de 100) (fara TVA)
€ 10,89
€ 0,109 Buc. (Intr-un pachet de 100) (cu TVA)
100
€ 9,00
€ 0,09 Buc. (Intr-un pachet de 100) (fara TVA)
€ 10,89
€ 0,109 Buc. (Intr-un pachet de 100) (cu TVA)
Informatii despre stoc temporar indisponibile
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 100 - 200 | € 0,09 | € 9,00 |
| 300+ | € 0,07 | € 7,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
100 mA
Maximum Drain Source Voltage
30 V
Tip pachet
SC-75
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6 Ω
Maximum Gate Threshold Voltage
1.5V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
100 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Number of Elements per Chip
1
Latime
0.8mm
Lungime
1.6mm
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
0.7mm
Tara de origine
Japan
Detalii produs


