Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Serie
2SK
Tip pachet
SC-67
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Lungime
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.5mm
Inaltime
15mm
Forward Diode Voltage
1.7V
Tara de origine
Malaysia
Detalii produs
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
€ 9,00
€ 1,80 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,89
€ 2,178 Buc. (Intr-un pachet de 5) (cu TVA)
5
€ 9,00
€ 1,80 Buc. (Intr-un pachet de 5) (fara TVA)
€ 10,89
€ 2,178 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 1,80 | € 9,00 |
| 25 - 45 | € 1,75 | € 8,75 |
| 50 - 95 | € 1,70 | € 8,50 |
| 100 - 245 | € 1,65 | € 8,25 |
| 250+ | € 1,60 | € 8,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
900 V
Serie
2SK
Tip pachet
SC-67
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Lungime
10mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.5mm
Inaltime
15mm
Forward Diode Voltage
1.7V
Tara de origine
Malaysia
Detalii produs


