Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Series
NexFET
Tip pachet
WSON
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
4.7nC
Maximum Power Dissipation Pd
2.9W
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.7mm
Standards/Approvals
No
Automotive Standard
No
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Standard
25
P.O.A.
Buc. (Intr-un pachet de 25) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Series
NexFET
Tip pachet
WSON
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
4.7nC
Maximum Power Dissipation Pd
2.9W
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.7mm
Standards/Approvals
No
Automotive Standard
No


