Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Tip pachet
WSON
Series
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.9W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1V
Typical Gate Charge Qg @ Vgs
4.7nC
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.7mm
Standards/Approvals
No
Automotive Standard
No
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Pe o rola de 3000) (fara TVA)
3000
P.O.A.
Buc. (Pe o rola de 3000) (fara TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Tip pachet
WSON
Series
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.9W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
1V
Typical Gate Charge Qg @ Vgs
4.7nC
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.7mm
Standards/Approvals
No
Automotive Standard
No


