Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Tip pachet
WSON
Serie
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.9W
Maximum Gate Source Voltage Vgs
8 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
4.7nC
Forward Voltage Vf
1V
Temperatura maxima de lucru
150°C
Latime
2 mm
Inaltime
0.7mm
Lungime
2mm
Standards/Approvals
No
Automotive Standard
No
Informatii despre stoc temporar indisponibile
€ 600,00
€ 0,20 Buc. (Pe o rola de 3000) (fara TVA)
€ 726,00
€ 0,242 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 600,00
€ 0,20 Buc. (Pe o rola de 3000) (fara TVA)
€ 726,00
€ 0,242 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
20V
Tip pachet
WSON
Serie
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
2.39mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.9W
Maximum Gate Source Voltage Vgs
8 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
4.7nC
Forward Voltage Vf
1V
Temperatura maxima de lucru
150°C
Latime
2 mm
Inaltime
0.7mm
Lungime
2mm
Standards/Approvals
No
Automotive Standard
No


