Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
3.2W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Lungime
5.8mm
Inaltime
1.1mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 5,50
€ 1,10 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,66
€ 1,331 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 5,50
€ 1,10 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,66
€ 1,331 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
14nC
Maximum Power Dissipation Pd
3.2W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Lungime
5.8mm
Inaltime
1.1mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs


