Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serie
NexFET
Tip pachet
VSONP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 5,65
€ 1,13 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,72
€ 1,345 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 5,65
€ 1,13 Buc. (Intr-un pachet de 5) (fara TVA)
€ 6,72
€ 1,345 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
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Documente tehnice
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
60 V
Serie
NexFET
Tip pachet
VSONP
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
5mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Lungime
5.8mm
Inaltime
1.1mm
Temperatura minima de lucru
-55 °C
Detalii produs