Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
30V
Tip pachet
VSONP
Serie
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
128mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
500mW
Maximum Gate Source Voltage Vgs
12 V
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1V
Temperatura maxima de lucru
150°C
Latime
0.6 mm
Inaltime
0.2mm
Lungime
1mm
Standards/Approvals
No
Automotive Standard
No
Informatii despre stoc temporar indisponibile
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 363,00
€ 0,121 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 300,00
€ 0,10 Buc. (Pe o rola de 3000) (fara TVA)
€ 363,00
€ 0,121 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
30V
Tip pachet
VSONP
Serie
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
128mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
500mW
Maximum Gate Source Voltage Vgs
12 V
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1V
Temperatura maxima de lucru
150°C
Latime
0.6 mm
Inaltime
0.2mm
Lungime
1mm
Standards/Approvals
No
Automotive Standard
No


