Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Latime
3.4mm
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Serie
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Impachetare pentru productie (Rola)
10
P.O.A.
Buc. (Livrat pe rola) (fara TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Tip pachet
SON
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Latime
3.4mm
Temperatura maxima de lucru
+150 °C
Lungime
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Serie
NexFET
Temperatura minima de lucru
-55 °C
Inaltime
1.1mm
Detalii produs


