Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
73A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
17.3mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
4nC
Maximum Power Dissipation Pd
3W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.85V
Temperatura maxima de lucru
150°C
Lungime
5.8mm
Inaltime
1.1mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
Malaysia
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 800,00
€ 0,32 Buc. (Pe o rola de 2500) (fara TVA)
€ 968,00
€ 0,387 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 800,00
€ 0,32 Buc. (Pe o rola de 2500) (fara TVA)
€ 968,00
€ 0,387 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
73A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
17.3mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
4nC
Maximum Power Dissipation Pd
3W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.85V
Temperatura maxima de lucru
150°C
Lungime
5.8mm
Inaltime
1.1mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
Malaysia
Detalii produs


