Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
2.3W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.8mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 3,00
€ 0,30 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,63
€ 0,363 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 3,00
€ 0,30 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,63
€ 0,363 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SON
Series
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
2nC
Maximum Power Dissipation Pd
2.3W
Temperatura minima de lucru
-55°C
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Lungime
2mm
Inaltime
0.8mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs


