Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SON
Serie
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.3W
Maximum Gate Source Voltage Vgs
10 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
2nC
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Latime
2 mm
Inaltime
0.8mm
Lungime
2mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Informatii despre stoc temporar indisponibile
€ 3,00
€ 0,30 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,63
€ 0,363 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 3,00
€ 0,30 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,63
€ 0,363 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
Texas InstrumentsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
5A
Maximum Drain Source Voltage Vds
25V
Tip pachet
SON
Serie
NexFET
Montare
Surface
Numar pini
6
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2.3W
Maximum Gate Source Voltage Vgs
10 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
2nC
Forward Voltage Vf
0.8V
Temperatura maxima de lucru
150°C
Latime
2 mm
Inaltime
0.8mm
Lungime
2mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs


