Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
138A
Maximum Drain Source Voltage Vds
650V
Serie
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
414nC
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Latime
5.3 mm
Lungime
15.9mm
Inaltime
20.3mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 1.161,60
€ 38,72 Each (In a Tube of 30) (fara TVA)
€ 1.405,54
€ 46,851 Each (In a Tube of 30) (cu TVA)
30
€ 1.161,60
€ 38,72 Each (In a Tube of 30) (fara TVA)
€ 1.405,54
€ 46,851 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
138A
Maximum Drain Source Voltage Vds
650V
Serie
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
414nC
Maximum Power Dissipation Pd
625W
Maximum Gate Source Voltage Vgs
25 V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
150°C
Latime
5.3 mm
Lungime
15.9mm
Inaltime
20.3mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs


