Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh
Tip pachet
Max247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.3mm
Forward Diode Voltage
1.5V
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 39,10
€ 39,10 Buc. (fara TVA)
€ 47,31
€ 47,31 Buc. (cu TVA)
Standard
1
€ 39,10
€ 39,10 Buc. (fara TVA)
€ 47,31
€ 47,31 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
138 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh
Tip pachet
Max247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
625 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
15.9mm
Typical Gate Charge @ Vgs
414 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
5.3mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
20.3mm
Forward Diode Voltage
1.5V
Detalii produs


