Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
200V
Tip pachet
TO-247
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-50°C
Typical Gate Charge Qg @ Vgs
84nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
5.15 mm
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 20,85
€ 4,17 Each (Supplied in a Tube) (fara TVA)
€ 25,23
€ 5,05 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 20,85
€ 4,17 Each (Supplied in a Tube) (fara TVA)
€ 25,23
€ 5,05 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
5
| Cantitate | Pret unitar |
|---|---|
| 5 - 9 | € 4,17 |
| 10 - 24 | € 3,71 |
| 25 - 49 | € 3,31 |
| 50+ | € 3,12 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
75A
Maximum Drain Source Voltage Vds
200V
Tip pachet
TO-247
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
34mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
190W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-50°C
Typical Gate Charge Qg @ Vgs
84nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
5.15 mm
Inaltime
20.15mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs


