Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh M2
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
20.15mm
Transistor Material
Si
Lungime
15.75mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
5.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 9,29
€ 9,29 Each (Supplied in a Tube) (fara TVA)
€ 11,24
€ 11,24 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 9,29
€ 9,29 Each (Supplied in a Tube) (fara TVA)
€ 11,24
€ 11,24 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
1
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
600 V
Serie
MDmesh M2
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
450 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
20.15mm
Transistor Material
Si
Lungime
15.75mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Inaltime
5.15mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.6V
Tara de origine
China
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


