Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 6,55
€ 6,55 Buc. (fara TVA)
€ 7,93
€ 7,93 Buc. (cu TVA)
Standard
1
€ 6,55
€ 6,55 Buc. (fara TVA)
€ 7,93
€ 7,93 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar |
|---|---|
| 1 - 4 | € 6,55 |
| 5 - 9 | € 6,17 |
| 10 - 24 | € 5,51 |
| 25 - 49 | € 4,90 |
| 50+ | € 4,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
5.15mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
15.75mm
Temperatura maxima de lucru
+150 °C
Inaltime
20.15mm
Temperatura minima de lucru
-55 °C
Detalii produs


