Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
5.15mm
Lungime
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Inaltime
20.15mm
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 116,40
€ 3,88 Each (In a Tube of 30) (fara TVA)
€ 140,84
€ 4,695 Each (In a Tube of 30) (cu TVA)
30
€ 116,40
€ 3,88 Each (In a Tube of 30) (fara TVA)
€ 140,84
€ 4,695 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 30 - 30 | € 3,88 | € 116,40 |
| 60+ | € 3,65 | € 109,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-247
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
5.15mm
Lungime
15.75mm
Typical Gate Charge @ Vgs
124 nC @ 10 V
Inaltime
20.15mm
Detalii produs


