Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
5.15mm
Lungime
15.75mm
Typical Gate Charge @ Vgs
62.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
20.15mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 123,60
€ 4,12 Each (In a Tube of 30) (fara TVA)
€ 149,56
€ 4,985 Each (In a Tube of 30) (cu TVA)
30
€ 123,60
€ 4,12 Each (In a Tube of 30) (fara TVA)
€ 149,56
€ 4,985 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-247
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
5.15mm
Lungime
15.75mm
Typical Gate Charge @ Vgs
62.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
20.15mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


