Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-247
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Latime
5.15mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
20.15mm
Tara de origine
China
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 78,60
€ 2,62 Each (In a Tube of 30) (fara TVA)
€ 93,53
€ 3,118 Each (In a Tube of 30) (cu TVA)
30
€ 78,60
€ 2,62 Each (In a Tube of 30) (fara TVA)
€ 93,53
€ 3,118 Each (In a Tube of 30) (cu TVA)
30
Cumpara in pachete mari
Cantitate | Pret unitar | Per Tub |
---|---|---|
30 - 60 | € 2,62 | € 78,60 |
90 - 480 | € 2,18 | € 65,40 |
510 - 960 | € 1,91 | € 57,30 |
990 - 4980 | € 1,75 | € 52,50 |
5010+ | € 1,46 | € 43,80 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-247
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Lungime
15.75mm
Typical Gate Charge @ Vgs
172 nC @ 10 V
Latime
5.15mm
Number of Elements per Chip
1
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
20.15mm
Tara de origine
China
Detalii produs