Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOIC
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Frecventa minima de auto-rezonanta
150°C
Typical Gate Charge Qg @ Vgs
15nC
Temperatura maxima de lucru
-55°C
Transistor Configuration
Isolated
Inaltime
1.25mm
Lungime
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Detalii Produs
Informatii despre stoc temporar indisponibile
€ 22,60
€ 2,26 Buc. (Livrat pe rola) (fara TVA)
€ 27,35
€ 2,735 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 22,60
€ 2,26 Buc. (Livrat pe rola) (fara TVA)
€ 27,35
€ 2,735 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 10 - 20 | € 2,26 | € 11,30 |
| 25 - 95 | € 2,13 | € 10,65 |
| 100 - 495 | € 1,65 | € 8,25 |
| 500+ | € 1,38 | € 6,90 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
4A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOIC
Series
STripFET
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
55mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
2W
Frecventa minima de auto-rezonanta
150°C
Typical Gate Charge Qg @ Vgs
15nC
Temperatura maxima de lucru
-55°C
Transistor Configuration
Isolated
Inaltime
1.25mm
Lungime
5mm
Standards/Approvals
No
Number of Elements per Chip
2
Automotive Standard
No
Detalii Produs