Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SOT-23
Serie
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Temperatura maxima de lucru
150°C
Lungime
3.04mm
Standards/Approvals
No
Latime
1.75 mm
Inaltime
1.3mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 540,00
€ 0,18 Buc. (Pe o rola de 3000) (fara TVA)
€ 653,40
€ 0,218 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 540,00
€ 0,18 Buc. (Pe o rola de 3000) (fara TVA)
€ 653,40
€ 0,218 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
SOT-23
Serie
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
90mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
350mW
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Temperatura maxima de lucru
150°C
Lungime
3.04mm
Standards/Approvals
No
Latime
1.75 mm
Inaltime
1.3mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


