Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Tip pachet
SOT-23
Serie
STripFET V
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
8 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
150°C
Latime
1.75 mm
Inaltime
1.3mm
Lungime
3.04mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 1.080,00
€ 0,36 Buc. (Pe o rola de 3000) (fara TVA)
€ 1.306,80
€ 0,436 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 1.080,00
€ 0,36 Buc. (Pe o rola de 3000) (fara TVA)
€ 1.306,80
€ 0,436 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.3A
Maximum Drain Source Voltage Vds
20V
Tip pachet
SOT-23
Serie
STripFET V
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
40mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
8 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
6nC
Maximum Power Dissipation Pd
350mW
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
150°C
Latime
1.75 mm
Inaltime
1.3mm
Lungime
3.04mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Detalii produs
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


