Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 87,50
€ 1,75 Each (In a Tube of 50) (fara TVA)
€ 105,88
€ 2,118 Each (In a Tube of 50) (cu TVA)
50
€ 87,50
€ 1,75 Each (In a Tube of 50) (fara TVA)
€ 105,88
€ 2,118 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,75 | € 87,50 |
| 100+ | € 1,65 | € 82,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
6.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
142nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


