Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
120 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
15.75mm
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 70,50
€ 1,41 Each (In a Tube of 50) (fara TVA)
€ 85,30
€ 1,706 Each (In a Tube of 50) (cu TVA)
50
€ 70,50
€ 1,41 Each (In a Tube of 50) (fara TVA)
€ 85,30
€ 1,706 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,41 | € 70,50 |
| 100+ | € 1,33 | € 66,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
120 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
15.75mm
Detalii produs


