Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Distrelec Product Id
171-00-936
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 2,86
€ 2,86 Buc. (fara TVA)
€ 3,46
€ 3,46 Buc. (cu TVA)
Standard
1
€ 2,86
€ 2,86 Buc. (fara TVA)
€ 3,46
€ 3,46 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 2,86 |
| 10 - 99 | € 2,41 |
| 100 - 499 | € 1,85 |
| 500 - 999 | € 1,56 |
| 1000+ | € 1,30 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
11mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
9.15mm
Lungime
10.4mm
Standards/Approvals
No
Distrelec Product Id
171-00-936
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


