Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.4mm
Latime
4.6mm
Typical Gate Charge @ Vgs
43 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Serie
STripFET II
Temperatura minima de lucru
-65 °C
Inaltime
9.15mm
Informatii despre stoc temporar indisponibile
P.O.A.
1
P.O.A.
Informatii despre stoc temporar indisponibile
1
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
100 W
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.4mm
Latime
4.6mm
Typical Gate Charge @ Vgs
43 nC @ 5 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Serie
STripFET II
Temperatura minima de lucru
-65 °C
Inaltime
9.15mm


