Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh M2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
15.75mm
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
€ 7,45
€ 1,49 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,01
€ 1,803 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 7,45
€ 1,49 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,01
€ 1,803 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 1,49 | € 7,45 |
| 25 - 45 | € 1,40 | € 7,00 |
| 50 - 120 | € 1,25 | € 6,25 |
| 125 - 245 | € 1,11 | € 5,55 |
| 250+ | € 1,05 | € 5,25 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh M2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
4.6mm
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Transistor Material
Si
Inaltime
15.75mm
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


