Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh M2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
€ 44,00
€ 0,88 Each (In a Tube of 50) (fara TVA)
€ 53,24
€ 1,065 Each (In a Tube of 50) (cu TVA)
50
€ 44,00
€ 0,88 Each (In a Tube of 50) (fara TVA)
€ 53,24
€ 1,065 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 0,88 | € 44,00 |
| 100 - 200 | € 0,65 | € 32,50 |
| 250+ | € 0,58 | € 29,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
650 V
Serie
MDmesh M2
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
1.4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
8.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


