Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 9,13
€ 9,13 Buc. (fara TVA)
€ 11,05
€ 11,05 Buc. (cu TVA)
Standard
1
€ 9,13
€ 9,13 Buc. (fara TVA)
€ 11,05
€ 11,05 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 4 | € 9,13 |
| 5 - 9 | € 8,59 |
| 10 - 24 | € 7,67 |
| 25 - 49 | € 6,84 |
| 50+ | € 6,42 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
42 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
63 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
98 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Inaltime
15.75mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


