Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Inaltime
9.15mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 85,50
€ 1,71 Each (In a Tube of 50) (fara TVA)
€ 103,46
€ 2,069 Each (In a Tube of 50) (cu TVA)
50
€ 85,50
€ 1,71 Each (In a Tube of 50) (fara TVA)
€ 103,46
€ 2,069 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,71 | € 85,50 |
| 100+ | € 1,62 | € 81,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
18mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
95W
Maximum Gate Source Voltage Vgs
16 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Inaltime
9.15mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


