Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serie
STripFET II
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 8,10
€ 1,62 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,80
€ 1,96 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 8,10
€ 1,62 Buc. (Intr-un pachet de 5) (fara TVA)
€ 9,80
€ 1,96 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 5 | € 1,62 | € 8,10 |
| 10+ | € 1,52 | € 7,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
60 V
Serie
STripFET II
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
95 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Typical Gate Charge @ Vgs
27 nC @ 4.5 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


