Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Tip pachet
TO-220
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
4.6mm
Inaltime
15.75mm
Detalii produs
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 5,69
€ 5,69 Buc. (fara TVA)
€ 6,88
€ 6,88 Buc. (cu TVA)
Standard
1
€ 5,69
€ 5,69 Buc. (fara TVA)
€ 6,88
€ 6,88 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar |
---|---|
1 - 4 | € 5,69 |
5 - 9 | € 5,35 |
10 - 24 | € 4,77 |
25 - 49 | € 4,26 |
50+ | € 3,99 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
1500 V
Tip pachet
TO-220
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
30 nC @ 10 V
Latime
4.6mm
Inaltime
15.75mm
Detalii produs