Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 60,00
€ 1,20 Each (In a Tube of 50) (fara TVA)
€ 71,40
€ 1,428 Each (In a Tube of 50) (cu TVA)
50
€ 60,00
€ 1,20 Each (In a Tube of 50) (fara TVA)
€ 71,40
€ 1,428 Each (In a Tube of 50) (cu TVA)
50
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 1,20 | € 60,00 |
100 - 450 | € 0,92 | € 46,00 |
500 - 950 | € 0,77 | € 38,50 |
1000 - 4950 | € 0,64 | € 32,00 |
5000+ | € 0,60 | € 30,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs