Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Latime
4.6mm
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 18,20
€ 1,82 Each (Supplied in a Tube) (fara TVA)
€ 22,02
€ 2,202 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 18,20
€ 1,82 Each (Supplied in a Tube) (fara TVA)
€ 22,02
€ 2,202 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
46.5 nC @ 10 V
Latime
4.6mm
Inaltime
9.15mm
Temperatura minima de lucru
-55 °C
Detalii produs


