Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Latime
4.6mm
Inaltime
9.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 8,40
€ 0,84 Each (Supplied in a Tube) (fara TVA)
€ 10,16
€ 1,016 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 8,40
€ 0,84 Each (Supplied in a Tube) (fara TVA)
€ 10,16
€ 1,016 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
40 nC @ 10 V
Latime
4.6mm
Inaltime
9.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


