Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
4.6mm
Inaltime
9.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 54,00
€ 1,08 Each (In a Tube of 50) (fara TVA)
€ 65,34
€ 1,307 Each (In a Tube of 50) (cu TVA)
50
€ 54,00
€ 1,08 Each (In a Tube of 50) (fara TVA)
€ 65,34
€ 1,307 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,08 | € 54,00 |
| 100+ | € 1,02 | € 51,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
100 V
Tip pachet
TO-220
Serie
STripFET
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
115 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Latime
4.6mm
Inaltime
9.15mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


