Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Serie
MDmesh M2
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 5,58
€ 2,79 Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,75
€ 3,376 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 5,58
€ 2,79 Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,75
€ 3,376 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 8 | € 2,79 | € 5,58 |
| 10 - 18 | € 2,63 | € 5,26 |
| 20 - 48 | € 2,35 | € 4,70 |
| 50 - 98 | € 2,08 | € 4,16 |
| 100+ | € 1,96 | € 3,92 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220
Serie
MDmesh M2
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
36 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).


