Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
24nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
25 V
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Lungime
10.4mm
Inaltime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China
Informatii despre stoc temporar indisponibile
€ 8,42
€ 4,21 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,19
€ 5,094 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 8,42
€ 4,21 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,19
€ 5,094 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 8 | € 4,21 | € 8,42 |
| 10 - 18 | € 3,93 | € 7,86 |
| 20 - 48 | € 3,68 | € 7,36 |
| 50 - 98 | € 3,44 | € 6,88 |
| 100+ | € 3,25 | € 6,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
15A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
195mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
24nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
25 V
Frecventa minima de auto-rezonanta
-55°C
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Lungime
10.4mm
Inaltime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Tara de origine
China


