Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
15.75mm
Tara de origine
China
€ 8,42
€ 4,21 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,19
€ 5,094 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 8,42
€ 4,21 Buc. (Intr-un pachet de 2) (fara TVA)
€ 10,19
€ 5,094 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 8 | € 4,21 | € 8,42 |
| 10 - 18 | € 3,93 | € 7,86 |
| 20 - 48 | € 3,68 | € 7,36 |
| 50 - 98 | € 3,44 | € 6,88 |
| 100+ | € 3,25 | € 6,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.6V
Inaltime
15.75mm
Tara de origine
China


