Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
183nC
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Standards/Approvals
No
Inaltime
15.75mm
Lungime
10.4mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 8,86
€ 8,86 Buc. (fara TVA)
€ 10,72
€ 10,72 Buc. (cu TVA)
Standard
1
€ 8,86
€ 8,86 Buc. (fara TVA)
€ 10,72
€ 10,72 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 1 | € 8,86 |
| 2+ | € 8,33 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-220
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
183nC
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Standards/Approvals
No
Inaltime
15.75mm
Lungime
10.4mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


