Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Serie
STripFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.15mm
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
30 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
50 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Maximum Gate Source Voltage
-15 V, +15 V
Typical Gate Charge @ Vgs
6.5 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+175 °C
Lungime
10.4mm
Latime
4.6mm
Serie
STripFET
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
9.15mm