Transistor,MOSFET,STP22NE10L

Nr. stoc RS: 485-7579Producator: STMicroelectronicsCod de producator: STP22NE10L
Vezi toate produsele din Tranzistoare MOSFET

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)

Specificatii

Marca

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Tip pachet

TO-220

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

90 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Lungime

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Inaltime

15.75mm

Latime

4.6mm

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Informatii despre stoc temporar indisponibile

P.O.A.

Buc. (Intr-un pachet de 5) (fara TVA)

Transistor,MOSFET,STP22NE10L

5

Disponibil in multiplu de 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

P.O.A.

Buc. (Intr-un pachet de 5) (fara TVA)

Transistor,MOSFET,STP22NE10L

Informatii despre stoc temporar indisponibile

5

Disponibil in multiplu de 5
5P.O.A.
10P.O.A.
15P.O.A.
20P.O.A.
25P.O.A.
30P.O.A.
35P.O.A.
40P.O.A.
45P.O.A.
50P.O.A.
55P.O.A.
60P.O.A.
65P.O.A.
70P.O.A.
75P.O.A.

S-ar putea să te intereseze

Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)

Specificatii

Marca

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

100 V

Tip pachet

TO-220

Timp montare

Through Hole

Numar pini

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

90 W

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Temperatura maxima de lucru

+175 °C

Lungime

10.4mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Inaltime

15.75mm

Latime

4.6mm

S-ar putea să te intereseze