Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 31,50
€ 0,63 Each (In a Tube of 50) (fara TVA)
€ 38,12
€ 0,762 Each (In a Tube of 50) (cu TVA)
50
€ 31,50
€ 0,63 Each (In a Tube of 50) (fara TVA)
€ 38,12
€ 0,762 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 0,63 | € 31,50 |
| 100 - 450 | € 0,47 | € 23,50 |
| 500 - 950 | € 0,40 | € 20,00 |
| 1000 - 4950 | € 0,32 | € 16,00 |
| 5000+ | € 0,28 | € 14,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Detalii produs


