Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Serie
MDmesh K5, SuperMESH5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 157,00
€ 3,14 Each (In a Tube of 50) (fara TVA)
€ 186,83
€ 3,737 Each (In a Tube of 50) (cu TVA)
50
€ 157,00
€ 3,14 Each (In a Tube of 50) (fara TVA)
€ 186,83
€ 3,737 Each (In a Tube of 50) (cu TVA)
50
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Tub |
---|---|---|
50 - 50 | € 3,14 | € 157,00 |
100 - 200 | € 2,49 | € 124,50 |
250+ | € 2,26 | € 113,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
950 V
Serie
MDmesh K5, SuperMESH5
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
170 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Inaltime
15.75mm
Temperatura minima de lucru
-55 °C
Tara de origine
China
Detalii produs