Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
310W
Forward Voltage Vf
1.5V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Inaltime
9.15mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 5,94
€ 2,97 Each (Supplied in a Tube) (fara TVA)
€ 7,19
€ 3,594 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
2
€ 5,94
€ 2,97 Each (Supplied in a Tube) (fara TVA)
€ 7,19
€ 3,594 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
2
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-220
Serie
STripFET II
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
20 V
Maximum Power Dissipation Pd
310W
Forward Voltage Vf
1.5V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Temperatura maxima de lucru
175°C
Lungime
10.4mm
Standards/Approvals
No
Latime
4.6 mm
Inaltime
9.15mm
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


