Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serie
STripFET II
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
160 nC @ 10 V
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
9.15mm
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
€ 5,94
€ 2,97 Each (Supplied in a Tube) (fara TVA)
€ 7,19
€ 3,594 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
2
€ 5,94
€ 2,97 Each (Supplied in a Tube) (fara TVA)
€ 7,19
€ 3,594 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
2
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serie
STripFET II
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
310 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
160 nC @ 10 V
Lungime
10.4mm
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Inaltime
9.15mm
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


