Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Tip pachet
TO-220
Serie
STripFET H7
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 11,50
€ 2,30 Each (Supplied in a Tube) (fara TVA)
€ 13,92
€ 2,783 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
5
€ 11,50
€ 2,30 Each (Supplied in a Tube) (fara TVA)
€ 13,92
€ 2,783 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
90A
Maximum Drain Source Voltage Vds
80V
Tip pachet
TO-220
Serie
STripFET H7
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
4.3mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
200W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
96nC
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Latime
4.6 mm
Inaltime
15.75mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


