Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Serie
STripFET
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Temperatura maxima de lucru
175°C
Lungime
6.7mm
Standards/Approvals
No
Latime
3.7 mm
Inaltime
1.8mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 4,20
€ 0,42 Buc. (Livrat pe rola) (fara TVA)
€ 5,08
€ 0,508 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 4,20
€ 0,42 Buc. (Livrat pe rola) (fara TVA)
€ 5,08
€ 0,508 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
3A
Maximum Drain Source Voltage Vds
60V
Tip pachet
SOT-223
Serie
STripFET
Montare
Surface
Numar pini
4
Maximum Drain Source Resistance Rds
160mΩ
Channel Mode
Enhancement
Forward Voltage Vf
-1.1V
Maximum Power Dissipation Pd
2.6W
Maximum Gate Source Voltage Vgs
20 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
6.4nC
Temperatura maxima de lucru
175°C
Lungime
6.7mm
Standards/Approvals
No
Latime
3.7 mm
Inaltime
1.8mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


