Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Latime
3.5mm
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.8mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 9,50
€ 0,95 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,30
€ 1,13 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,50
€ 0,95 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,30
€ 1,13 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 20 | € 0,95 | € 9,50 |
30 - 90 | € 0,89 | € 8,90 |
100 - 490 | € 0,66 | € 6,60 |
500 - 990 | € 0,56 | € 5,60 |
1000+ | € 0,44 | € 4,40 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Serie
MDmesh, SuperMESH
Tip pachet
SOT-223
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
7 nC @ 10 V
Transistor Material
Si
Latime
3.5mm
Number of Elements per Chip
1
Lungime
6.5mm
Temperatura maxima de lucru
+150 °C
Inaltime
1.8mm
Temperatura minima de lucru
-55 °C
Detalii produs