Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Serie
STripFET F3
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
5.2 mm
Inaltime
0.95mm
Lungime
6.15mm
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 2.820,00
€ 0,94 Buc. (Pe o rola de 3000) (fara TVA)
€ 3.412,20
€ 1,137 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 2.820,00
€ 0,94 Buc. (Pe o rola de 3000) (fara TVA)
€ 3.412,20
€ 1,137 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
100V
Serie
STripFET F3
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
50mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
70W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
20.5nC
Temperatura maxima de lucru
175°C
Standards/Approvals
No
Latime
5.2 mm
Inaltime
0.95mm
Lungime
6.15mm
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


