Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Series
STripFET
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
20 V
Temperatura maxima de lucru
175°C
Lungime
6.35mm
Standards/Approvals
No
Latime
5.4 mm
Inaltime
0.95mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 2.130,00
€ 0,71 Buc. (Pe o rola de 3000) (fara TVA)
€ 2.577,30
€ 0,859 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 2.130,00
€ 0,71 Buc. (Pe o rola de 3000) (fara TVA)
€ 2.577,30
€ 0,859 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
40V
Series
STripFET
Tip pachet
PowerFLAT
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
19mΩ
Channel Mode
Enhancement
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
34nC
Forward Voltage Vf
1.1V
Maximum Power Dissipation Pd
100W
Maximum Gate Source Voltage Vgs
20 V
Temperatura maxima de lucru
175°C
Lungime
6.35mm
Standards/Approvals
No
Latime
5.4 mm
Inaltime
0.95mm
Automotive Standard
No
Tara de origine
China
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


